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| geometry process details principal device types 2n3904 cmkt3904 cmlt3904e cmpt3904 cmpt3904e cmst3904 cxt3904 czt3904 gross die per 4 inch wafer 93,826 process CP392V smal signal transistor npn - amp/switch transistor chip process epitaxial planar die size 11 x 11 mils die thickness 7.1 mils base bonding pad area 3.7 x 3.7 mils emitter bonding pad area 3.7 x 3.7 mils top side metalization al - 30,000? back side metalization au - 12,000? backside collector r0 www.centralsemi.com r2 (13-may 2010)
process CP392V typical electrical characteristics www.centralsemi.com r2 (13-may 2010) |
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